Kamar yadda muka sani, haɓakar haɓakar fasahar kayan aikin da aka yi niyya yana da alaƙa da haɓakar haɓaka fasahar fina-finai a cikin masana'antar aikace-aikacen ƙasa.Tare da haɓakar fasaha na samfuran fim ko abubuwan haɗin gwiwa a cikin masana'antar aikace-aikacen, fasahar da aka yi niyya kuma yakamata ta canza.Misali, masana'antun Ic kwanan nan sun mayar da hankali kan haɓaka ƙarancin wutar lantarki na jan ƙarfe, wanda ake tsammanin zai maye gurbin ainihin fim ɗin aluminium a cikin ƴan shekaru masu zuwa, don haka haɓaka maƙasudin jan ƙarfe da makasudin shingen da ake buƙata zai zama cikin gaggawa.
Bugu da kari, a cikin 'yan shekarun nan, Flat panel nuni (FPD) ya maye gurbin na'ura mai kwakwalwa ta cathode-ray tube (CRT) da kasuwar talabijin.Hakanan zai ƙara haɓaka fasaha da buƙatun kasuwa don manufofin ITO.Sannan akwai fasahar ajiya.Bukatar manyan ɗimbin yawa, manyan faifai masu ƙarfi da manyan fayafai masu gogewa na ci gaba da ƙaruwa.Duk waɗannan sun haifar da canje-canje a cikin buƙatun kayan da aka yi niyya a cikin masana'antar aikace-aikacen.A cikin mai zuwa, za mu gabatar da manyan wuraren aikace-aikace na manufa da kuma ci gaban ci gaban manufa a waɗannan fagagen.
1. Microelectronics
A cikin duk masana'antun aikace-aikacen, masana'antar semiconductor tana da mafi kyawun buƙatun inganci don fina-finai masu zuƙowa.Silicon wafers na 12 inch (300 epistaxis) yanzu an kera su.Faɗin haɗin haɗin yana raguwa.Abubuwan da ake buƙata na masana'antun wafer na silicon don kayan da aka yi niyya sune manyan sikelin, babban tsabta, ƙananan rarrabuwa da hatsi mai kyau, wanda ke buƙatar kayan da aka yi niyya don samun mafi kyawun microstructure.An yi la'akari da diamita na barbashi na crystalline da daidaituwar kayan da aka yi niyya a matsayin mahimman abubuwan da ke shafar ƙimar adadin fim ɗin.
Idan aka kwatanta da aluminum, jan ƙarfe yana da ƙarfin ƙarfin lantarki da ƙananan juriya, wanda zai iya saduwa da buƙatun fasahar gudanarwa a cikin wayoyi na submicron da ke ƙasa 0.25um, amma yana kawo wasu matsalolin: ƙananan ƙarfin mannewa tsakanin jan karfe da kayan matsakaici na kwayoyin halitta.Bugu da ƙari, yana da sauƙin amsawa, wanda ke haifar da lalata haɗin haɗin haɗin jan karfe da raguwa a lokacin amfani da guntu.Don magance wannan matsala, ya kamata a saita shinge mai shinge tsakanin jan karfe da dielectric Layer.
Abubuwan da aka yi niyya da aka yi amfani da su a cikin shingen shinge na haɗin gwiwar tagulla sun haɗa da Ta, W, TaSi, WSI, da dai sauransu. Amma Ta da W ƙananan ƙarfe ne.Yana da ɗan wahala a yi, kuma ana nazarin gami kamar molybdenum da chromium azaman madadin kayan.
2. Don nuni
Flat panel nuni (FPD) ya yi tasiri sosai a kan na'ura mai kula da kwamfuta da kasuwar talabijin na cathode-ray tube (CRT) a tsawon shekaru, kuma zai haifar da fasaha da buƙatun kasuwa na kayan aikin ITO.Akwai nau'ikan ITO iri biyu a yau.Daya shine a yi amfani da nanometer jihar indium oxide da tin oxide foda bayan sintering, dayan shi ne a yi amfani da indium tin alloy manufa.ITO fim na iya ƙirƙira ta DC reactive sputtering a kan indium-tin gami manufa, amma manufa surface zai oxidize da kuma rinjayar sputtering kudi, kuma yana da wuya a samu manyan size gami manufa.
A zamanin yau, ana amfani da hanyar farko gabaɗaya don samar da kayan da aka yi niyya na ITO, wanda ke tsirowa ta hanyar abin da ke haifar da sputtering na magnetron.Yana da saurin ajiyar kuɗi.Za a iya sarrafa nauyin fim ɗin daidai, ƙaddamarwa yana da girma, daidaiton fim ɗin yana da kyau, kuma mannewa na substrate yana da ƙarfi.Amma abin da aka yi niyya yana da wuyar yin shi, saboda indium oxide da tin oxide ba sa haɗuwa cikin sauƙi tare.Gabaɗaya, ZrO2, Bi2O3 da CeO an zaɓi su azaman ƙari na sintering, kuma ana iya samun abin da aka yi niyya tare da ƙimar 93% ~ 98% na ƙimar ka'idar.Ayyukan fim na ITO da aka kafa ta wannan hanya yana da dangantaka mai kyau tare da additives.
Tsarin toshewa na fim ɗin ITO da aka samu ta amfani da irin wannan kayan da aka yi niyya ya kai 8.1 × 10n-cm, wanda ke kusa da tsayayyar fim ɗin ITO mai tsabta.Girman FPD da gilashin sarrafawa yana da girma sosai, kuma nisa na gilashin gudanarwa na iya kaiwa 3133mm.Don haɓaka amfani da kayan da aka yi niyya, an haɓaka kayan aikin ITO tare da siffofi daban-daban, kamar siffar silinda.A cikin 2000, Hukumar Tsare-tsare ta Ƙasa da Ma'aikatar Kimiyya da Fasaha sun haɗa da manyan manufofin ITO a cikin Jagororin Mahimman Sana'o'in Masana'antu na Watsa Labarai a halin yanzu da aka ba da fifiko don ci gaba.
3. Amfanin ajiya
Dangane da fasahar ajiya, haɓakar faifan diski mai ƙarfi da ƙarfi yana buƙatar babban adadin kayan fim ɗin giant ƙin yarda.Fim ɗin CoF ~ Cu multilayer ɗin da aka haɗe shine tsarin da aka yi amfani da shi sosai na babban fim ɗin ƙin yarda.Abun manufa na TbFeCo da ake buƙata don faifan maganadisu har yanzu yana kan ci gaba.Faifan maganadisu da aka ƙera tare da TbFeCo yana da halaye na babban ƙarfin ajiya, tsawon rayuwar sabis da maimaita gogewar mara lamba.
Antimony germanium telluride based phase Change memory (PCM) ya nuna gagarumin yuwuwar kasuwanci, ya zama bangare NOR flash memory da DRAM kasuwar madadin fasahar ajiya, duk da haka, a cikin aiwatarwa da sauri rage girman ɗayan ƙalubalen da ke kan hanyar wanzuwa shine rashin sake saitawa. Ana iya saukar da abin da ake samarwa na yanzu gaba ɗaya rufaffiyar naúrar.Rage sake saiti na halin yanzu yana rage yawan ƙarfin ƙwaƙwalwar ajiya, ƙara rayuwar baturi, da haɓaka bandwidth na bayanai, duk mahimman fasalulluka a cikin na'urori masu amfani da bayanai na yau, masu ɗaukar nauyi.
Lokacin aikawa: Agusta-09-2022